NXP USA Inc. BUK652R0-30C,127
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- BUK652R0-30C,127
- NXP USA Inc.
- MOSFET N-CH 30V 120A TO220AB
- Transistors - FETs, MOSFETs - Single
- BUK652R0-30C,127 數據表
- TO-220-3
- Cut Tape (CT)
-
無鉛/符合RoHS - 15328
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
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| Part Number BUK652R0-30C,127 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer NXP USA Inc. |
| Description MOSFET N-CH 30V 120A TO220AB |
| Package Cut Tape (CT) |
| Series TrenchMOS™ |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-220-3 |
| Supplier Device Package TO-220AB |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 306W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 30 V |
| Current - Continuous Drain (Id) @ 25°C 120A (Tc) |
| Rds On (Max) @ Id, Vgs 2.2mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id 2.8V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs 229 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 14964 pF @ 25 V |
| Vgs (Max) ±16V |
| Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
| Package_case TO-220-3 |
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