EPC EPC2111ENGRT
- EPC2111ENGRT
- EPC
- TRANS GAN ASYMMETRICAL HALF BRID
- Transistors - FETs, MOSFETs - Arrays
- EPC2111ENGRT 數據表
- Die
- Die
- 無鉛/符合RoHS
- 971
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
- 點擊獲取費率
Part Number EPC2111ENGRT |
Category Transistors - FETs, MOSFETs - Arrays |
Manufacturer EPC |
Description TRANS GAN ASYMMETRICAL HALF BRID |
Package Die |
Series - |
Operating Temperature -40°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case Die |
Supplier Device Package Die |
FET Type 2 N-Channel (Half Bridge) |
FET Feature GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) 30V |
Current - Continuous Drain (Id) @ 25°C 16A (Ta) |
Rds On (Max) @ Id, Vgs 19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V |
Vgs(th) (Max) @ Id 2.5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs 2.2nC @ 5V, 5.7nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds 230pF @ 15V, 590pF @ 15V |
Package_case Die |
EPC2111ENGRT 保障
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