ON Semiconductor FDR842P
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- FDR842P
- ON Semiconductor
- MOSFET P-CH 12V 11A SUPERSOT8
- Transistors - FETs, MOSFETs - Single
- FDR842P 數據表
- 8-LSOP (0.130\", 3.30mm Width)
- Cut Tape (CT)
-
無鉛/符合RoHS - 4567
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
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| Part Number FDR842P |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer ON Semiconductor |
| Description MOSFET P-CH 12V 11A SUPERSOT8 |
| Package Cut Tape (CT) |
| Series - |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 8-LSOP (0.130\", 3.30mm Width) |
| Supplier Device Package SuperSOT™-8 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 1.8W (Ta) |
| FET Type P-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 12 V |
| Current - Continuous Drain (Id) @ 25°C 11A (Ta) |
| Rds On (Max) @ Id, Vgs 9mOhm @ 11A, 4.5V |
| Vgs(th) (Max) @ Id 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 80 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds 5350 pF @ 6 V |
| Vgs (Max) ±8V |
| Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V |
| Package_case 8-LSOP (0.130\", 3.30mm Width) |
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