Fairchild Semiconductor FQT1N80TF_WS
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- FQT1N80TF_WS
- Fairchild Semiconductor
- MOSFET N-CH 800V 0.2A SOT-223
- Transistors - FETs, MOSFETs - Single
- FQT1N80TF_WS 數據表
- TO-261-4, TO-261AA
- TO-261-4, TO-261AA
-
無鉛/符合RoHS - 2483
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
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| Part Number FQT1N80TF_WS |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Fairchild Semiconductor |
| Description MOSFET N-CH 800V 0.2A SOT-223 |
| Package TO-261-4, TO-261AA |
| Series QFET? |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-261-4, TO-261AA |
| Supplier Device Package SOT-223-3 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 2.1W (Tc) |
| FET Type N-Channel |
| Drain to Source Voltage (Vdss) 800V |
| Current - Continuous Drain (Id) @ 25°C 200mA (Tc) |
| Rds On (Max) @ Id, Vgs 20 Ohm @ 100mA, 10V |
| Vgs(th) (Max) @ Id 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 7.2nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds 195pF @ 25V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Vgs (Max) 30V |
| Package_case TO-261-4, TO-261AA |
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