Toshiba Semiconductor and Storage GT10J312(Q)
- GT10J312(Q)
- Toshiba Semiconductor and Storage
- IGBT 600V 10A 60W TO220SM
- Transistors - IGBTs - Single
- GT10J312(Q) 數據表
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Tube
-
無鉛/符合RoHS
- 18642
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
- 點擊獲取費率
Part Number GT10J312(Q) |
Category Transistors - IGBTs - Single |
Manufacturer Toshiba Semiconductor and Storage |
Description IGBT 600V 10A 60W TO220SM |
Package Tube |
Series - |
Operating Temperature 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package TO-220SM |
Power - Max 60 W |
Input Type Standard |
Reverse Recovery Time (trr) 200 ns |
Current - Collector (Ic) (Max) 10 A |
Voltage - Collector Emitter Breakdown (Max) 600 V |
IGBT Type - |
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A |
Gate Charge - |
Td (on/off) @ 25°C 400ns/400ns |
Test Condition 300V, 10A, 100Ohm, 15V |
Current - Collector Pulsed (Icm) 20 A |
Switching Energy - |
Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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