GT10J312(Q)

Toshiba Semiconductor and Storage GT10J312(Q)

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  • GT10J312(Q)
  • Toshiba Semiconductor and Storage
  • IGBT 600V 10A 60W TO220SM
  • Transistors - IGBTs - Single
  • GT10J312(Q) 數據表
  • TO-252-3, DPak (2 Leads + Tab), SC-63
  • Tube
  • 無鉛/符合RoHS無鉛/符合RoHS
  • 18642
  • 現貨庫存/特許經銷商/工廠剩餘庫存
  • 1年品質保障 》
  • 點擊獲取費率
Part Number
GT10J312(Q)
Category
Transistors - IGBTs - Single
Manufacturer
Toshiba Semiconductor and Storage
Description
IGBT 600V 10A 60W TO220SM
Package
Tube
Series
-
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
TO-220SM
Power - Max
60 W
Input Type
Standard
Reverse Recovery Time (trr)
200 ns
Current - Collector (Ic) (Max)
10 A
Voltage - Collector Emitter Breakdown (Max)
600 V
IGBT Type
-
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 10A
Gate Charge
-
Td (on/off) @ 25°C
400ns/400ns
Test Condition
300V, 10A, 100Ohm, 15V
Current - Collector Pulsed (Icm)
20 A
Switching Energy
-
Package_case
TO-252-3, DPak (2 Leads + Tab), SC-63

GT10J312(Q) 保障

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Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage - Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, ...
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