GT50J121(Q)

Toshiba Semiconductor and Storage GT50J121(Q)

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  • GT50J121(Q)
  • Toshiba Semiconductor and Storage
  • IGBT 600V 50A 240W TO3P LH
  • Transistors - IGBTs - Single
  • GT50J121(Q) 數據表
  • TO-3PL
  • Tube
  • 無鉛/符合RoHS無鉛/符合RoHS
  • 20255
  • 現貨庫存/特許經銷商/工廠剩餘庫存
  • 1年品質保障 》
  • 點擊獲取費率
Part Number
GT50J121(Q)
Category
Transistors - IGBTs - Single
Manufacturer
Toshiba Semiconductor and Storage
Description
IGBT 600V 50A 240W TO3P LH
Package
Tube
Series
-
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3PL
Supplier Device Package
TO-3P(LH)
Power - Max
240 W
Input Type
Standard
Reverse Recovery Time (trr)
-
Current - Collector (Ic) (Max)
50 A
Voltage - Collector Emitter Breakdown (Max)
600 V
IGBT Type
-
Vce(on) (Max) @ Vge, Ic
2.45V @ 15V, 50A
Gate Charge
-
Td (on/off) @ 25°C
90ns/300ns
Test Condition
300V, 50A, 13Ohm, 15V
Current - Collector Pulsed (Icm)
100 A
Switching Energy
1.3mJ (on), 1.34mJ (off)
Package_case
TO-3PL

GT50J121(Q) 保障

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Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage - Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, ...
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