Toshiba Semiconductor and Storage GT50J121(Q)
- GT50J121(Q)
- Toshiba Semiconductor and Storage
- IGBT 600V 50A 240W TO3P LH
- Transistors - IGBTs - Single
- GT50J121(Q) 數據表
- TO-3PL
- Tube
-
無鉛/符合RoHS
- 20255
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
- 點擊獲取費率
Part Number GT50J121(Q) |
Category Transistors - IGBTs - Single |
Manufacturer Toshiba Semiconductor and Storage |
Description IGBT 600V 50A 240W TO3P LH |
Package Tube |
Series - |
Operating Temperature 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-3PL |
Supplier Device Package TO-3P(LH) |
Power - Max 240 W |
Input Type Standard |
Reverse Recovery Time (trr) - |
Current - Collector (Ic) (Max) 50 A |
Voltage - Collector Emitter Breakdown (Max) 600 V |
IGBT Type - |
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 50A |
Gate Charge - |
Td (on/off) @ 25°C 90ns/300ns |
Test Condition 300V, 50A, 13Ohm, 15V |
Current - Collector Pulsed (Icm) 100 A |
Switching Energy 1.3mJ (on), 1.34mJ (off) |
Package_case TO-3PL |
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