Fairchild Semiconductor HUF75939S3ST
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- HUF75939S3ST
- Fairchild Semiconductor
- N-CHANNEL POWER MOSFET
- Transistors - FETs, MOSFETs - Single
- HUF75939S3ST 數據表
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Bulk
-
無鉛/符合RoHS - 23532
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
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| Part Number HUF75939S3ST |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Fairchild Semiconductor |
| Description N-CHANNEL POWER MOSFET |
| Package Bulk |
| Series UltraFET® |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package D2PAK (TO-263) |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 180W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 200 V |
| Current - Continuous Drain (Id) @ 25°C 22A (Tc) |
| Rds On (Max) @ Id, Vgs 125mOhm @ 22A, 10V |
| Vgs(th) (Max) @ Id 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 152 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 25 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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