Vishay Siliconix IRFD214
- IRFD214
- Vishay Siliconix
- MOSFET N-CH 250V 450MA 4-DIP
- Transistors - FETs, MOSFETs - Single
- IRFD214 數據表
- 4-DIP (0.300", 7.62mm)
- 4-DIP (0.300", 7.62mm)
-
無鉛/符合RoHS
- 7193
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
- 點擊獲取費率
Part Number IRFD214 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 250V 450MA 4-DIP |
Package 4-DIP (0.300", 7.62mm) |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case 4-DIP (0.300", 7.62mm) |
Supplier Device Package 4-DIP, Hexdip, HVMDIP |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 1W (Ta) |
FET Type N-Channel |
Drain to Source Voltage (Vdss) 250V |
Current - Continuous Drain (Id) @ 25°C 450mA (Ta) |
Rds On (Max) @ Id, Vgs 2 Ohm @ 270mA, 10V |
Vgs(th) (Max) @ Id 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Vgs (Max) ±20V |
Package_case 4-DIP (0.300", 7.62mm) |
IRFD214 保障
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