Vishay Siliconix IRFD9010PBF
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- IRFD9010PBF
- Vishay Siliconix
- MOSFET P-CH 50V 1.1A 4DIP
- Transistors - FETs, MOSFETs - Single
- IRFD9010PBF 數據表
- 4-DIP (0.300\", 7.62mm)
- Cut Tape (CT)
-
無鉛/符合RoHS - 18937
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
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| Part Number IRFD9010PBF |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Vishay Siliconix |
| Description MOSFET P-CH 50V 1.1A 4DIP |
| Package Cut Tape (CT) |
| Series - |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case 4-DIP (0.300\", 7.62mm) |
| Supplier Device Package 4-HVMDIP |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 1W (Tc) |
| FET Type P-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 50 V |
| Current - Continuous Drain (Id) @ 25°C 1.1A (Tc) |
| Rds On (Max) @ Id, Vgs 500mOhm @ 580mA, 10V |
| Vgs(th) (Max) @ Id 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 240 pF @ 25 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case 4-DIP (0.300\", 7.62mm) |
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