Vishay Siliconix IRFIB5N65APBF
- IRFIB5N65APBF
- Vishay Siliconix
- MOSFET N-CH 650V 5.1A TO220-3
- Transistors - FETs, MOSFETs - Single
- IRFIB5N65APBF 數據表
- TO-220-3 Full Pack, Isolated Tab
- Tube
-
無鉛/符合RoHS
- 3527
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
- 點擊獲取費率
Part Number IRFIB5N65APBF |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 650V 5.1A TO220-3 |
Package Tube |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package TO-220-3 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 60W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 650 V |
Current - Continuous Drain (Id) @ 25°C 5.1A (Tc) |
Rds On (Max) @ Id, Vgs 930mOhm @ 3.1A, 10V |
Vgs(th) (Max) @ Id 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 1417 pF @ 25 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-220-3 Full Pack, Isolated Tab |
IRFIB5N65APBF 保障
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