Vishay Siliconix IRFIBF30GPBF
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- IRFIBF30GPBF
- Vishay Siliconix
- MOSFET N-CH 900V 1.9A TO220-3
- Transistors - FETs, MOSFETs - Single
- IRFIBF30GPBF 數據表
- TO-220-3 Full Pack, Isolated Tab
- Tube
-
無鉛/符合RoHS - 25752
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
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| Part Number IRFIBF30GPBF |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Vishay Siliconix |
| Description MOSFET N-CH 900V 1.9A TO220-3 |
| Package Tube |
| Series - |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-220-3 Full Pack, Isolated Tab |
| Supplier Device Package TO-220-3 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 35W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 900 V |
| Current - Continuous Drain (Id) @ 25°C 1.9A (Tc) |
| Rds On (Max) @ Id, Vgs 3.7Ohm @ 1.1A, 10V |
| Vgs(th) (Max) @ Id 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 78 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 25 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-220-3 Full Pack, Isolated Tab |
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