Vishay Siliconix IRLD024PBF
- IRLD024PBF
- Vishay Siliconix
- MOSFET N-CH 60V 2.5A 4DIP
- Transistors - FETs, MOSFETs - Single
- IRLD024PBF 數據表
- 4-DIP (0.300\", 7.62mm)
- Cut Tape (CT)
-
無鉛/符合RoHS
- 7287
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
- 點擊獲取費率
Part Number IRLD024PBF |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 60V 2.5A 4DIP |
Package Cut Tape (CT) |
Series - |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Through Hole |
Package / Case 4-DIP (0.300\", 7.62mm) |
Supplier Device Package 4-HVMDIP |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 1.3W (Ta) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 60 V |
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta) |
Rds On (Max) @ Id, Vgs 100mOhm @ 1.5A, 5V |
Vgs(th) (Max) @ Id 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 5 V |
Input Capacitance (Ciss) (Max) @ Vds 870 pF @ 25 V |
Vgs (Max) ±10V |
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V |
Package_case 4-DIP (0.300\", 7.62mm) |
IRLD024PBF 保障
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