IXYS IXFH80N65X2-4
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- IXFH80N65X2-4
- IXYS
- MOSFET N-CH 650V 80A TO247-4L
- Transistors - FETs, MOSFETs - Single
- IXFH80N65X2-4 數據表
- TO-247-4
- Tube
-
無鉛/符合RoHS - 9728
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
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| Part Number IXFH80N65X2-4 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer IXYS |
| Description MOSFET N-CH 650V 80A TO247-4L |
| Package Tube |
| Series HiPerFET™ |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-247-4 |
| Supplier Device Package TO-247-4L |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 890W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 650 V |
| Current - Continuous Drain (Id) @ 25°C 80A (Tc) |
| Rds On (Max) @ Id, Vgs 38mOhm @ 500mA, 10V |
| Vgs(th) (Max) @ Id 5V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs 140 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 8300 pF @ 25 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-247-4 |
IXFH80N65X2-4 保障
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