Renesas Electronics America Inc NP100P06PDG-E1-AY
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- NP100P06PDG-E1-AY
- Renesas Electronics America Inc
- MOSFET P-CH 60V 100A TO263
- Transistors - FETs, MOSFETs - Single
- NP100P06PDG-E1-AY 數據表
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Tube
-
無鉛/符合RoHS - 15936
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
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| Part Number NP100P06PDG-E1-AY |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Renesas Electronics America Inc |
| Description MOSFET P-CH 60V 100A TO263 |
| Package Tube |
| Series - |
| Operating Temperature 175°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package TO-263 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 1.8W (Ta), 200W (Tc) |
| FET Type P-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 60 V |
| Current - Continuous Drain (Id) @ 25°C 100A (Tc) |
| Rds On (Max) @ Id, Vgs 6mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs 300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 15000 pF @ 10 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
| Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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