NXP USA Inc. PMDPB56XN,115
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- PMDPB56XN,115
- NXP USA Inc.
- MOSFET 2N-CH 30V 3.1A HUSON6
- Transistors - FETs, MOSFETs - Arrays
- PMDPB56XN,115 數據表
- 6-UDFN Exposed Pad
- Tape & Reel (TR)
-
無鉛/符合RoHS - 4834
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
- 點擊獲取費率
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| Part Number PMDPB56XN,115 |
| Category Transistors - FETs, MOSFETs - Arrays |
| Manufacturer NXP USA Inc. |
| Description MOSFET 2N-CH 30V 3.1A HUSON6 |
| Package Tape & Reel (TR) |
| Series - |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 6-UDFN Exposed Pad |
| Supplier Device Package 6-HUSON (2x2) |
| Power - Max 510mW |
| FET Type 2 N-Channel (Dual) |
| FET Feature Logic Level Gate |
| Drain to Source Voltage (Vdss) 30V |
| Current - Continuous Drain (Id) @ 25°C 3.1A |
| Rds On (Max) @ Id, Vgs 73mOhm @ 3.1A, 4.5V |
| Vgs(th) (Max) @ Id 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 2.9nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds 170pF @ 15V |
| Package_case 6-UDFN Exposed Pad |
PMDPB56XN,115 保障
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NXP USA Inc.
NXP Semiconductors enables secure connections and infrastructure for a smarter world, advancing solutions that make lives easier, better and safer. As the world leader in secure connectivity solutions for embedded applications, NXP is ...
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