NXP USA Inc. PMWD30UN,518
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- PMWD30UN,518
- NXP USA Inc.
- MOSFET 2N-CH 30V 5A 8TSSOP
- Transistors - FETs, MOSFETs - Arrays
- PMWD30UN,518 數據表
- 8-TSSOP (0.173\", 4.40mm Width)
- Cut Tape (CT)
-
無鉛/符合RoHS - 4888
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
- 點擊獲取費率
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| Part Number PMWD30UN,518 |
| Category Transistors - FETs, MOSFETs - Arrays |
| Manufacturer NXP USA Inc. |
| Description MOSFET 2N-CH 30V 5A 8TSSOP |
| Package Cut Tape (CT) |
| Series TrenchMOS™ |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 8-TSSOP (0.173\", 4.40mm Width) |
| Supplier Device Package 8-TSSOP |
| Power - Max 2.3W |
| FET Type 2 N-Channel (Dual) |
| FET Feature Logic Level Gate |
| Drain to Source Voltage (Vdss) 30V |
| Current - Continuous Drain (Id) @ 25°C 5A |
| Rds On (Max) @ Id, Vgs 33mOhm @ 3.5A, 4.5V |
| Vgs(th) (Max) @ Id 700mV @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs 28nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds 1478pF @ 10V |
| Package_case 8-TSSOP (0.173\", 4.40mm Width) |
PMWD30UN,518 保障
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