NXP USA Inc. PSMN8R0-30YL,115
- PSMN8R0-30YL,115
- NXP USA Inc.
- MOSFET N-CH 30V 62A LFPAK56
- Transistors - FETs, MOSFETs - Single
- PSMN8R0-30YL,115 數據表
- SC-100, SOT-669
- Cut Tape (CT)
-
無鉛/符合RoHS
- 2662
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
- 點擊獲取費率
Part Number PSMN8R0-30YL,115 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer NXP USA Inc. |
Description MOSFET N-CH 30V 62A LFPAK56 |
Package Cut Tape (CT) |
Series TrenchMOS™ |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case SC-100, SOT-669 |
Supplier Device Package LFPAK56, Power-SO8 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 56W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 30 V |
Current - Continuous Drain (Id) @ 25°C 62A (Tc) |
Rds On (Max) @ Id, Vgs 8.3mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id 2.15V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs 18.3 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 1005 pF @ 15 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case SC-100, SOT-669 |
PSMN8R0-30YL,115 保障
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NXP USA Inc.
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NXP Semiconductors enables secure connections and infrastructure for a smarter world, advancing solutions that make lives easier, better and safer. As the world leader in secure connectivity solutions for embedded applications, NXP is ...
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