Toshiba Semiconductor and Storage RN1704JE(TE85L,F)
- RN1704JE(TE85L,F)
- Toshiba Semiconductor and Storage
- TRANS 2NPN PREBIAS 0.1W ESV
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- RN1704JE(TE85L,F) 數據表
- SOT-553
- Cut Tape (CT)
-
無鉛/符合RoHS
- 16582
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
- 點擊獲取費率
Part Number RN1704JE(TE85L,F) |
Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Manufacturer Toshiba Semiconductor and Storage |
Description TRANS 2NPN PREBIAS 0.1W ESV |
Package Cut Tape (CT) |
Series - |
Mounting Type Surface Mount |
Package / Case SOT-553 |
Supplier Device Package ESV |
Power - Max 100mW |
Transistor Type 2 NPN - Pre-Biased (Dual) (Emitter Coupled) |
Current - Collector (Ic) (Max) 100mA |
Voltage - Collector Emitter Breakdown (Max) 50V |
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V |
Frequency - Transition 250MHz |
Resistor - Base (R1) 47kOhms |
Resistor - Emitter Base (R2) 47kOhms |
Package_case SOT-553 |
RN1704JE(TE85L,F) 保障
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