Toshiba Semiconductor and Storage RN4986FE,LF(CB
- RN4986FE,LF(CB
- Toshiba Semiconductor and Storage
- TRANS NPN/PNP PREBIAS 0.1W ES6
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- RN4986FE,LF(CB 數據表
- SOT-563, SOT-666
- SOT-563, SOT-666
-
無鉛/符合RoHS
- 2755
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
- 點擊獲取費率
Part Number RN4986FE,LF(CB |
Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Manufacturer Toshiba Semiconductor and Storage |
Description TRANS NPN/PNP PREBIAS 0.1W ES6 |
Package SOT-563, SOT-666 |
Series - |
Mounting Type Surface Mount |
Package / Case SOT-563, SOT-666 |
Supplier Device Package ES6 |
Power - Max 100mW |
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) 100mA |
Voltage - Collector Emitter Breakdown (Max) 50V |
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) 500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V |
Frequency - Transition 250MHz, 200MHz |
Resistor - Base (R1) 4.7 kOhms |
Resistor - Emitter Base (R2) 47 kOhms |
Package_case SOT-563, SOT-666 |
RN4986FE,LF(CB 保障
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