Vishay Siliconix SI2329DS-T1-GE3
- SI2329DS-T1-GE3
- Vishay Siliconix
- MOSFET P-CH 8V 6A SOT23-3
- Transistors - FETs, MOSFETs - Single
- SI2329DS-T1-GE3 數據表
- TO-236-3, SC-59, SOT-23-3
- Jinftry-Reel®
-
無鉛/符合RoHS
- 10089
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
- 點擊獲取費率
Part Number SI2329DS-T1-GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET P-CH 8V 6A SOT23-3 |
Package Jinftry-Reel® |
Series TrenchFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package SOT-23-3 (TO-236) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 2.5W (Tc) |
FET Type P-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 8 V |
Current - Continuous Drain (Id) @ 25°C 6A (Tc) |
Rds On (Max) @ Id, Vgs 30mOhm @ 5.3A, 4.5V |
Vgs(th) (Max) @ Id 800mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 4.5 V |
Input Capacitance (Ciss) (Max) @ Vds 1485 pF @ 4 V |
Vgs (Max) ±5V |
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V |
Package_case TO-236-3, SC-59, SOT-23-3 |
SI2329DS-T1-GE3 保障
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