Vishay Siliconix SI4010DY-T1-GE3
- SI4010DY-T1-GE3
- Vishay Siliconix
- MOSFET N-CHANNEL 30V 31.3A 8SO
- Transistors - FETs, MOSFETs - Single
- SI4010DY-T1-GE3 數據表
- 8-SOIC (0.154\", 3.90mm Width)
- Box
-
無鉛/符合RoHS
- 13134
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
- 點擊獲取費率
Part Number SI4010DY-T1-GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CHANNEL 30V 31.3A 8SO |
Package Box |
Series TrenchFET® |
Operating Temperature -55°C ~ 150°C (TA) |
Mounting Type Surface Mount |
Package / Case 8-SOIC (0.154\", 3.90mm Width) |
Supplier Device Package 8-SOIC |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 6W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 30 V |
Current - Continuous Drain (Id) @ 25°C 31.3A (Tc) |
Rds On (Max) @ Id, Vgs 3.4mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 77 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 3595 pF @ 15 V |
Vgs (Max) +20V, -16V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case 8-SOIC (0.154\", 3.90mm Width) |
SI4010DY-T1-GE3 保障
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