Vishay Siliconix SI4176DY-T1-E3
- SI4176DY-T1-E3
- Vishay Siliconix
- MOSFET N-CH 30V 12A 8SO
- Transistors - FETs, MOSFETs - Single
- SI4176DY-T1-E3 數據表
- 8-SOIC (0.154", 3.90mm Width)
- 8-SOIC (0.154", 3.90mm Width)
-
無鉛/符合RoHS
- 28794
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
- 點擊獲取費率
Part Number SI4176DY-T1-E3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 30V 12A 8SO |
Package 8-SOIC (0.154", 3.90mm Width) |
Series TrenchFET? |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package 8-SO |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 2.4W (Ta), 5W (Tc) |
FET Type N-Channel |
Drain to Source Voltage (Vdss) 30V |
Current - Continuous Drain (Id) @ 25°C 12A (Tc) |
Rds On (Max) @ Id, Vgs 20 mOhm @ 8.3A, 10V |
Vgs(th) (Max) @ Id 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 15V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Vgs (Max) ±20V |
Package_case 8-SOIC (0.154", 3.90mm Width) |
SI4176DY-T1-E3 保障
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