Vishay Siliconix SIA413DJ-T1-GE3
- SIA413DJ-T1-GE3
- Vishay Siliconix
- MOSFET P-CH 12V 12A PPAK SC70-6
- Transistors - FETs, MOSFETs - Single
- SIA413DJ-T1-GE3 數據表
- PowerPAK® SC-70-6
- Jinftry-Reel®
-
無鉛/符合RoHS
- 3530
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
- 點擊獲取費率
Part Number SIA413DJ-T1-GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET P-CH 12V 12A PPAK SC70-6 |
Package Jinftry-Reel® |
Series TrenchFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case PowerPAK® SC-70-6 |
Supplier Device Package PowerPAK® SC-70-6 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 3.5W (Ta), 19W (Tc) |
FET Type P-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 12 V |
Current - Continuous Drain (Id) @ 25°C 12A (Tc) |
Rds On (Max) @ Id, Vgs 29mOhm @ 6.7A, 4.5V |
Vgs(th) (Max) @ Id 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 8 V |
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 10 V |
Vgs (Max) ±8V |
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V |
Package_case PowerPAK® SC-70-6 |
SIA413DJ-T1-GE3 保障
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