Vishay Siliconix SIR624DP-T1-RE3
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- SIR624DP-T1-RE3
- Vishay Siliconix
- MOSFET N-CH 200V 5.7A/18.6A PPAK
- Transistors - FETs, MOSFETs - Single
- SIR624DP-T1-RE3 數據表
- PowerPAK® SO-8
- Cut Tape (CT)
-
無鉛/符合RoHS - 18180
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
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| Part Number SIR624DP-T1-RE3 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Vishay Siliconix |
| Description MOSFET N-CH 200V 5.7A/18.6A PPAK |
| Package Cut Tape (CT) |
| Series ThunderFET® |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case PowerPAK® SO-8 |
| Supplier Device Package PowerPAK® SO-8 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 5W (Ta), 52W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 200 V |
| Current - Continuous Drain (Id) @ 25°C 5.7A (Ta), 18.6A (Tc) |
| Rds On (Max) @ Id, Vgs 60mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 1110 pF @ 100 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V |
| Package_case PowerPAK® SO-8 |
SIR624DP-T1-RE3 保障
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