Vishay Siliconix SIRA20DP-T1-RE3
- SIRA20DP-T1-RE3
- Vishay Siliconix
- MOSFET N-CH 25V 81.7A/100A PPAK
- Transistors - FETs, MOSFETs - Single
- SIRA20DP-T1-RE3 數據表
- PowerPAK® SO-8
- Cut Tape (CT)
-
無鉛/符合RoHS
- 14842
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
- 點擊獲取費率
Part Number SIRA20DP-T1-RE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 25V 81.7A/100A PPAK |
Package Cut Tape (CT) |
Series TrenchFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case PowerPAK® SO-8 |
Supplier Device Package PowerPAK® SO-8 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 6.25W (Ta), 104W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 25 V |
Current - Continuous Drain (Id) @ 25°C 81.7A (Ta), 100A (Tc) |
Rds On (Max) @ Id, Vgs 0.58mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 10850 pF @ 10 V |
Vgs (Max) +16V, -12V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case PowerPAK® SO-8 |
SIRA20DP-T1-RE3 保障
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