Vishay Siliconix SQJ886EP-T1_GE3
- SQJ886EP-T1_GE3
- Vishay Siliconix
- MOSFET N-CH 40V 60A PPAK SO-8
- Transistors - FETs, MOSFETs - Single
- SQJ886EP-T1_GE3 數據表
- PowerPAK® SO-8 Dual
- Cut Tape (CT)
-
無鉛/符合RoHS
- 4581
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
- 點擊獲取費率
Part Number SQJ886EP-T1_GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 40V 60A PPAK SO-8 |
Package Cut Tape (CT) |
Series Automotive, AEC-Q101, TrenchFET® |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case PowerPAK® SO-8 Dual |
Supplier Device Package PowerPAK® SO-8 Dual |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 55W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 40 V |
Current - Continuous Drain (Id) @ 25°C 60A (Tc) |
Rds On (Max) @ Id, Vgs 4.5mOhm @ 15.3A, 10V |
Vgs(th) (Max) @ Id 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 2922 pF @ 20 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case PowerPAK® SO-8 Dual |
SQJ886EP-T1_GE3 保障
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