STMicroelectronics STGWT80H65DFB
- STGWT80H65DFB
- STMicroelectronics
- IGBT 650V 120A 469W TO3P-3L
- Transistors - IGBTs - Single
- STGWT80H65DFB 數據表
- TO-3P-3, SC-65-3
- Tube
-
無鉛/符合RoHS
- 2566
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
- 點擊獲取費率
Part Number STGWT80H65DFB |
Category Transistors - IGBTs - Single |
Manufacturer STMicroelectronics |
Description IGBT 650V 120A 469W TO3P-3L |
Package Tube |
Series - |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-3P-3, SC-65-3 |
Supplier Device Package TO-3P |
Power - Max 469 W |
Input Type Standard |
Reverse Recovery Time (trr) 85 ns |
Current - Collector (Ic) (Max) 120 A |
Voltage - Collector Emitter Breakdown (Max) 650 V |
IGBT Type Trench Field Stop |
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 80A |
Gate Charge 414 nC |
Td (on/off) @ 25°C 84ns/280ns |
Test Condition 400V, 80A, 10Ohm, 15V |
Current - Collector Pulsed (Icm) 240 A |
Switching Energy 2.1mJ (on), 1.5mJ (off) |
Package_case TO-3P-3, SC-65-3 |
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STMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual ...
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