STMicroelectronics STW58N65DM2AG
- STW58N65DM2AG
- STMicroelectronics
- MOSFET N-CH 650V 48A TO247
- Transistors - FETs, MOSFETs - Single
- STW58N65DM2AG 數據表
- TO-247-3
- Tube
-
無鉛/符合RoHS
- 4660
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
- 點擊獲取費率
Part Number STW58N65DM2AG |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer STMicroelectronics |
Description MOSFET N-CH 650V 48A TO247 |
Package Tube |
Series Automotive, AEC-Q101, MDmesh™ DM2 |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-247-3 |
Supplier Device Package TO-247-3 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 360W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 650 V |
Current - Continuous Drain (Id) @ 25°C 48A (Tc) |
Rds On (Max) @ Id, Vgs 65mOhm @ 24A, 10V |
Vgs(th) (Max) @ Id 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 88 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 4100 pF @ 100 V |
Vgs (Max) ±25V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-247-3 |
STW58N65DM2AG 保障
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