Toshiba Semiconductor and Storage TJ60S06M3L(T6L1,NQ
- TJ60S06M3L(T6L1,NQ
- Toshiba Semiconductor and Storage
- MOSFET P-CH 60V 60A DPAK
- Transistors - FETs, MOSFETs - Single
- TJ60S06M3L(T6L1,NQ 數據表
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Tube
-
無鉛/符合RoHS
- 2301
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
- 點擊獲取費率
Part Number TJ60S06M3L(T6L1,NQ |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Toshiba Semiconductor and Storage |
Description MOSFET P-CH 60V 60A DPAK |
Package Tube |
Series U-MOSVI |
Operating Temperature 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package DPAK+ |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 100W (Tc) |
FET Type P-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 60 V |
Current - Continuous Drain (Id) @ 25°C 60A (Ta) |
Rds On (Max) @ Id, Vgs 11.2mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id 3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs 156 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 7760 pF @ 10 V |
Vgs (Max) +10V, -20V |
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V |
Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
TJ60S06M3L(T6L1,NQ 保障
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