Toshiba Semiconductor and Storage TK17N65W,S1F
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- TK17N65W,S1F
- Toshiba Semiconductor and Storage
- MOSFET N-CH 650V 17.3A TO247
- Transistors - FETs, MOSFETs - Single
- TK17N65W,S1F 數據表
- TO-247-3
- Tube
-
無鉛/符合RoHS - 2368
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
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| Part Number TK17N65W,S1F |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Toshiba Semiconductor and Storage |
| Description MOSFET N-CH 650V 17.3A TO247 |
| Package Tube |
| Series DTMOSIV |
| Operating Temperature 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-247-3 |
| Supplier Device Package TO-247 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 165W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 650 V |
| Current - Continuous Drain (Id) @ 25°C 17.3A (Ta) |
| Rds On (Max) @ Id, Vgs 200mOhm @ 8.7A, 10V |
| Vgs(th) (Max) @ Id 3.5V @ 900µA |
| Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 300 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-247-3 |
TK17N65W,S1F 保障
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