Toshiba Semiconductor and Storage TK3R3E08QM,S1X
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- TK3R3E08QM,S1X
- Toshiba Semiconductor and Storage
- UMOS10 TO-220AB 80V 3.3MOHM
- Transistors - FETs, MOSFETs - Single
- TK3R3E08QM,S1X 數據表
- TO-220-3
- Tube
-
無鉛/符合RoHS - 19823
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
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| Part Number TK3R3E08QM,S1X |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Toshiba Semiconductor and Storage |
| Description UMOS10 TO-220AB 80V 3.3MOHM |
| Package Tube |
| Series U-MOSX-H |
| Operating Temperature 175°C |
| Mounting Type Through Hole |
| Package / Case TO-220-3 |
| Supplier Device Package TO-220 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 230W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 80 V |
| Current - Continuous Drain (Id) @ 25°C 120A (Tc) |
| Rds On (Max) @ Id, Vgs 3.3mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id 3.5V @ 1.3mA |
| Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 7670 pF @ 40 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 6V, 10V |
| Package_case TO-220-3 |
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