Toshiba Semiconductor and Storage TPW4R50ANH,L1Q
- TPW4R50ANH,L1Q
- Toshiba Semiconductor and Storage
- MOSFET N-CH 100V 92A 8DSOP
- Transistors - FETs, MOSFETs - Single
- TPW4R50ANH,L1Q 數據表
- 8-PowerWDFN
- Cut Tape (CT)
-
無鉛/符合RoHS
- 12033
- 現貨庫存/特許經銷商/工廠剩餘庫存
- 1年品質保障 》
- 點擊獲取費率
Part Number TPW4R50ANH,L1Q |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Toshiba Semiconductor and Storage |
Description MOSFET N-CH 100V 92A 8DSOP |
Package Cut Tape (CT) |
Series U-MOSVIII-H |
Operating Temperature 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-PowerWDFN |
Supplier Device Package 8-DSOP Advance |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 800mW (Ta), 142W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 100 V |
Current - Continuous Drain (Id) @ 25°C 92A (Tc) |
Rds On (Max) @ Id, Vgs 4.5mOhm @ 46A, 10V |
Vgs(th) (Max) @ Id 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 5200 pF @ 50 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case 8-PowerWDFN |
TPW4R50ANH,L1Q 保障
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